NXP Semiconductors


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101 - 200 V MOSFETs

Selection guide
МОП-транзисторы 101 В - 200 В
BSP122 - N-channel enhancement mode vertical D-MOS transistor
BSP220 - P-channel enhancement mode vertical D-MOS transistor
BSS87 - N-channel enhancement mode vertical D-MOS transistor
PHB20NQ20T - N-channel TrenchMOS (tm) transistor
PHB33NQ20T - N-channel TrenchMOS standard level FET
PHB45NQ15T - N-channel TrenchMOS standard level FET
PHD9NQ20T - N-channel TrenchMOS (tm) transistor
PHK5NQ15T - TrenchMOS (tm) standard level FET
PHP18NQ11T - Trenchmos (tm) standard level FET
PHP20NQ20T - N-channel TrenchMOS (tm) transistor
PHP23NQ11T - N-channel Trenchmos (tm) standard level FET
PHP27NQ11T - N-channel Trenchmos (tm) standard level FET
PHP28NQ15T - N-channel TrenchMOS standard level FET
PHP30NQ15T - N-channel enhancement mode field-effect transistor
PHP33NQ20T - N-channel TrenchMOS standard level FET
PHP34NQ11T - N-channel Trenchmos (tm) standard level FET
PHP45NQ11T - N-channel Trenchmos (tm) standard level FET
PHP9NQ20T - N-channel TrenchMOS (tm) transistor
PML260SN - N-channel TrenchMOS standard level FET
PSMN015-110P - Trenchmos (tm) Standard level FET
PSMN020-150W - N-channel TrenchMOS (tm) transistor
PSMN030-150B - N-channel TrenchMOS (tm) transistor
PSMN030-150P - N-channel TrenchMOS (tm) transistor
PSMN035-150B - N-channel enhancement mode field-effect transistor
PSMN035-150P - N-channel enhancement mode field-effect transistor
PSMN040-200W - N-channel TrenchMOS (tm) transistor
PSMN057-200B - N-channel TrenchMOS (tm) transistor
PSMN057-200P - N-channel TrenchMOS (tm) transistor
PSMN059-150Y - N-channel TrenchMOS standard level FET
PSMN063-150D - N-channel enhancement mode field-effect transistor
PSMN070-200B - N-channel TrenchMOS (tm) transistor
PSMN070-200P - N-channel TrenchMOS (tm) transistor
PSMN085-150K - N-channel enhancement mode field-effect transistor
PSMN102-200Y - N-channel TrenchMOS standard level FET
PSMN130-200D - N-channel TrenchMOS (tm) transistor
PSMN165-200K - N-channel enhancement mode field-effect transistor

Enter one of the world’s foremost MOSFET power portfolios

Enter one of the world’s foremost MOSFET power portfolios and sample our robust and easy-to-use MOSFETs, ideal for space- and power-critical applications. For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.

Key benefits

  • Efficient switching
  • Performance
  • Choice of package type matching application

Key features

  • Low on-state resistance
  • Low figure of merit
  • Wide package range
  • Suitable for a wide range of applications

Descriptive summary

Innovation in TrenchMOS technology
NXP's commitment to development and innovation, with continuous improvements in key parameters such as RDSon, switching and thermal efficiency have resulted in our ability to continuously release world leading MOSFET devices.

Many package options
For applications where RDSon is the key factor, we offer a comprehensive range of low voltage MOSFETs in a wide variety of packages including LFPAK, SO8, DPAK, SOT23 and TO-220.