Low VCEsat (BISS) transistors

Keep your design’s power consumption and heat dissipation to a minimum

Our low VCE(sat) [BISS] devices are the perfect solution for keeping your design’s power consumption and heat dissipation to a minimum.

Key features

• Low collector-emitter saturation voltage, VCE(sat), and corresponding resistance, RCE(sat) (down to < 30 mOhm)
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• High performance in reduced board space
• Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

• Medium power peripheral drivers e.g. fan, motor
• Strobe flash units for DSC and mobile phones
• Inverter applications e.g. TFT displays
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion

Descriptive summary

BISS transistors deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology). This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

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